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IRF540 N-Channel Power MOSFET TO-220 (100V-0.044Ω-33A)
EGP15.00
Description
IRF540 N-Channel Power MOSFET TO-220 (100V-0.044Ω-33A)
The IRF540 N-Channel Power MOSFET TO-220 (100V-0.044Ω-33A) is an advanced enhancement-mode silicon-gate power field-effect transistor designed for high-efficiency power switching and amplification applications. this device combines low on-state resistance with fast switching speeds to minimize power losses and heat generation in demanding circuits.
Features
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
Detailed Specifications
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 100V |
| Continuous Drain Current (Id) | 33A |
| Drain-Source Resistance (Rds On) | 44mOhms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 71 nC |
| Operating Temperature Range | -55 – 175°C |
| Power Dissipation (Pd) | 130W |
Application:
- DC-DC converters for efficient power regulation in electronics.
- Motor control systems in robotics and automotive applications.
- Switching power supplies for high-current loads.
- Battery management and charging circuits in portable devices.
- Inverters and amplifiers in audio and renewable energy systems.
