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Tip127 PNP Darlington Bipolar Power Transistor 100V 5A TO-220
EGP12.00
Description
Tip127 PNP Darlington Bipolar Power Transistor 100V 5A TO-220
The TIP127 is a silicon PNP power transistor manufactured in planar technology with a “base island” layout and a monolithic Darlington configuration. This device offers exceptional high gain performance coupled with very low saturation voltage. It is designed for low voltage complementary power applications and acts as the PNP complement to the TIP122 NPN transistor
Features
- Low voltage power Darlington transistor
- Low collector-emitter saturation voltage
- Monolithic Darlington configuration
- Planar technology with “base island” layout
- Exceptional high gain performance
Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Base Voltage (IE = 0) | VCBO | -100 | V |
| Collector-Emitter Voltage (IB = 0) | VCEO | -100 | V |
| Emitter-Base Voltage (IC = 0) | VEBO | -5 | V |
| Collector Current | IC | -5 | A |
| Collector Peak Current | ICM | -8 | A |
| Base Current | IB | -0.12 | A |
| Total Power Dissipation (TC ≤ 25°C) | PTOT | 65 | W |
| Total Power Dissipation (TA ≤ 25°C) | PTOT | 2 | W |
| DC Current Gain (IC = 3A, VCE = 3V) | hFE | 1000 (min) | – |
| Storage Temperature Range | Tstg | -65 to 150 | °C |
| Max. Operating Junction Temperature | TJ | 150 | °C |
